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P-edge NMOSFET for Improving TID Tolerance
Xie, Xiaodong, Yang, Zhizhan, Deng, Mingxing, Chen, Kongbin, Li, WeiYear:
2019
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2019.2891268
File:
PDF, 6 KB
english, 2019