P-edge NMOSFET for Improving TID Tolerance

Xie, Xiaodong, Yang, Zhizhan, Deng, Mingxing, Chen, Kongbin, Li, Wei

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Year:

2019

Language:

english

Journal:

IEEE Transactions on Device and Materials Reliability

DOI:

10.1109/TDMR.2019.2891268

File:

PDF, 6 KB

english, 2019

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