Threshold Voltage Instability in GaN HEMTs with p-type...

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IEEE Electron Device Letters 2019

Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation

Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Decoutere, Stefaan, Sangiorgi, Enrico, Fiegna, Claudio
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2897911
File:
PDF, 5 KB
english, 2019
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