GaN Schottky barrier diodes with nickel nitride anodes...

Vacuum 2019 / 04 Vol. 162

GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure

Li, Xiaobo, Pu, Taofei, Taiki, Hoshi, Zhang, Tong, Xie, Tian, Luke Fujiwara, Shigeki Joseph, Kitahata, Hiroshi, Li, Liuan, Kobayashi, Sachio, Ito, Motoo, Li, Xianjie, Ao, Jin-Ping
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Volume:
162
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2019.01.030
Date:
April, 2019
File:
PDF, 1.80 MB
english, 2019
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