Properties of GaN epilayers grown on misoriented sapphire...

MRS Internet Journal of Nitride Semiconductor Research 1998 Vol. 3

Properties of GaN epilayers grown on misoriented sapphire substrates

Trager-Cowan, Carol, McArthur, S., Middleton, P. G., O'Donnell, K. P., Zubia, D., Hersee, S. D.
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Volume:
3
Year:
1998
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300001083
File:
PDF, 338 KB
1998
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