Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed...

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Sensors and Actuators B: Chemical 2019 / 2

Ultra-thin sub-10 nm Ga2O3-WO3 heterostructures developed by atomic layer deposition for sensitive and selective C2H5OH detection on ppm level

Wei, Zihan, Akbari, Mohammad Karbalai, Hai, Zhenyin, Ramachandran, Ranjith K., Detavernier, Christophe, Verpoort, Francis, Kats, Eugene, Xu, Hongyan, Hu, Jie, Zhuiykov, Serge
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Language:
english
Journal:
Sensors and Actuators B: Chemical
DOI:
10.1016/j.snb.2019.02.046
Date:
February, 2019
File:
PDF, 1.60 MB
english, 2019
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