A High Speed Si-based Power Transistor with...

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IEEE Electron Device Letters 2019

A High Speed Si-based Power Transistor with Bipolar-Assisted Gate Discharging Behavior

Lin, Min-Zhi, Liu, Lei, Ye, Zhi-Yuan, Yuan, Yuan-Lin, Yao, Yao, Wang, Peng-Fei
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Year:
2019
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2019.2899071
File:
PDF, 6 KB
2019
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