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[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications
Zota, C. B., Convertino, C., Baumgartner, Y., Sousa, M., Caimi, D., Czornomaz, L.Year:
2018
DOI:
10.1109/iedm.2018.8614530
File:
PDF, 5 KB
2018