Stability Improvement of Nitrogen Doping on IGO TFTs under...

ECS Journal of Solid State Science and Technology 2019 Vol. 8; Iss. 7

Stability Improvement of Nitrogen Doping on IGO TFTs under Positive Gate Bias Stress and Hysteresis Test

Cheng, Yen-Chi, Chang, Sheng-Po, Chang, Shoou-Jinn, Cheng, Tien-Hung, Tsai, Yen-Lin, Chiou, Yu-Zung, Lu, Lucent
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Volume:
8
Year:
2019
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0081907jss
File:
PDF, 926 KB
english, 2019
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