Plasma parameters, gas-phase chemistry and Si/SiO2 etching...

Vacuum 2019 / 05 Vol. 163

Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr+Cl2+O2 gas mixture: Effect of HBr/O2 mixing ratio

Lee, Byung Jun, Efremov, Alexander, Kwon, Kwang-Ho
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Volume:
163
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2019.02.014
Date:
May, 2019
File:
PDF, 1.20 MB
english, 2019
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