First demonstration of RF N-polar GaN MIS-HEMTs grown on...

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Semiconductor Science and Technology 2019 / 02

First demonstration of RF N-polar GaN MIS-HEMTs grown on Bulk GaN using PAMBE

Pasayat, Shubhra, Ahmadi, Elaheh, Romanczyk, Brian, Koksaldi, Onur, Agarwal, Anchal, Guidry, Matthew, Gupta, Chirag, Wurm, Christian, Keller, Stacia, Mishra, Umesh K
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab0761
Date:
February, 2019
File:
PDF, 389 KB
english, 2019
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