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[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors
Auer, U., Reuter, R., Ellrodt, P., Prost, W., Tegude, F.J.Year:
1996
DOI:
10.1109/iciprm.1996.492333
File:
PDF, 6 KB
1996