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Solid-State Electronics 2019 / 2

Synaptic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation

Keun Lee, Dong, Kim, Min-Hwi, Kim, Tae-Hyeon, Bang, Suhyun, Choi, Yeon-Joon, Kim, Sungjun, Cho, Seongjae, Park, Byung-Gook
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.02.008
Date:
February, 2019
File:
PDF, 778 KB
english, 2019
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