A streamlined drain-lag model for GaN HEMTs based on pulsed...

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International Journal of Microwave and Wireless Technologies 2019 / 2

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Luo, Peng, Schnieder, Frank, Bengtsson, Olof, Vadalà, Valeria, Raffo, Antonio, Heinrich, Wolfgang, Rudolph, Matthias
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Language:
english
Journal:
International Journal of Microwave and Wireless Technologies
DOI:
10.1017/S1759078719000060
Date:
February, 2019
File:
PDF, 753 KB
english, 2019
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