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Far-IR transmittance and metal–insulator phase transition properties of VO2 films using Al2O3 as buffer layer
Yang, Renhui, Wu, Zhiming, Ji, Chunhui, Wu, Xuefei, Xiang, Zihao, Zhang, Fan, Li, Weizhi, Wang, Jun, Dong, Xiang, Jiang, YadongLanguage:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-019-00949-2
Date:
February, 2019
File:
PDF, 4.19 MB
english, 2019