Strain-Energy Release in Bent Semiconductor Nanowires...

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Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation

Sun, Zhiyuan, Huang, Chunyi, Guo, Jinglong, Dong, Jason T, Klie, Robert F, Lauhon, Lincoln J., Seidman, David N.
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Language:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.9b01231
Date:
February, 2019
File:
PDF, 1.09 MB
english, 2019
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