![](/img/cover-not-exists.png)
p-doping of GaN by MOVPE
Haffouz, S., Beaumont, B., Leroux, M., Laugt, M., Lorenzini, P., Gibart, Pierre, Hubert-Pfalzgraf, L.G.Volume:
2
Year:
1997
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300001630
File:
PDF, 205 KB
english, 1997