Improved Characterization and Accurate Modelling of Drain...

Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility Transistors Devices

Asif, Muhammad, Xi, Wang, Hua, Zhao, Peng, Ding, Jan, Saeedullah, Zhi, Jin
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Volume:
19
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2019.16317
Date:
July, 2019
File:
PDF, 5.23 MB
english, 2019
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