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Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility Transistors Devices
Asif, Muhammad, Xi, Wang, Hua, Zhao, Peng, Ding, Jan, Saeedullah, Zhi, JinVolume:
19
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2019.16317
Date:
July, 2019
File:
PDF, 5.23 MB
english, 2019