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Stress-induced Charge Trapping and Electrical Properties of Atomic-Layer-Deposited HfAlO/Ga2O3 MOS capacitors
Zhang, Hongpeng, Yuan, Lei, Jia, Renxu, Tang, Xiaoyan, Hu, Jichao, Zhang, Yimen, Zhang, Yuming, Sun, JianwuLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/ab0b93
Date:
February, 2019
File:
PDF, 770 KB
english, 2019