Raised Body Doping-Less 1T-DRAM with Source/Drain Schottky...

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IEEE Journal of the Electron Devices Society 2019

Raised Body Doping-Less 1T-DRAM with Source/Drain Schottky Contact

Lin, Jyi-Tsong, Sun, Wei-Tse, Lin, Hung-Hsiu, Chen, Yi-Jie, Navlakha, Nupur, Kranti, Abhinav
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Year:
2019
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2896412
File:
PDF, 1.50 MB
english, 2019
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