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Investigation of I–V linearity in TaOₓ-based RRAM Devices for Neuromorphic Applications
Sung, Changhyuck, Padovani, Andrea, Beltrando, Bastien, Lee, Donguk, Kwak, Myunghoon, Lim, Seokjae, Larcher, Luca, Marca, Vincenzo Della, Hwang, HyunsangYear:
2019
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2902653
File:
PDF, 1.64 MB
english, 2019