Semipolar (112¯2) GaN Films Improved by in situ SiN x Pretreatment of m-Sapphire Substrate Surface
Wu, Zhengyuan, Jiang, Zhuoxun, Lu, Shiqiang, Li, Jinchai, Liu, Ran, Kang, Junyong, Fang, ZhilaiLanguage:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900001
Date:
March, 2019
File:
PDF, 2.62 MB
english, 2019