Effects of ultrathin AlN prelayers on the spontaneous...

Journal of Crystal Growth 2019 / 05 Vol. 514

Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy

Eftychis, S., Kruse, J.E., Tsagaraki, K., Koukoula, T., Kehagias, Th., Komninou, Ph., Georgakilas, A.
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Volume:
514
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.03.004
Date:
May, 2019
File:
PDF, 2.69 MB
english, 2019
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