Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated...

physica status solidi (a) 2019 / 02 Vol. 216; Iss. 4

Ion-Implant Isolated Vertical GaN p-n Diodes Fabricated with Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi A 4∕2019)

Wang, Jingshan, McCarthy, Robert, Youtsey, Chris, Reddy, Rekha, Xie, Jinqiao, Beam, Edward, Guido, Louis, Cao, Lina, Fay, Patrick
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Volume:
216
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201970019
Date:
February, 2019
File:
PDF, 439 KB
2019
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