Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal-insulator-metal capacitor structure
Cheng, Nan-Hung, Chen, Yung-Fang, Chang, Liann-Be, Kuei, Ping-Yu, Ferng, Yi-Cherng, Das, Atanu, Lin, Shu-Liang, Lin, Ching-ChiLanguage:
english
Journal:
IEEJ Transactions on Electrical and Electronic Engineering
DOI:
10.1002/tee.22904
Date:
March, 2019
File:
PDF, 721 KB
english, 2019