Analysis of I–V–T Characteristics of Au/n-InP Schottky...

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Journal of Electronic Materials 2019 / 3

Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature

Fritah, A., Dehimi, L., Pezzimenti, F., Saadoune, A., Abay, B.
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Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-019-07129-2
Date:
March, 2019
File:
PDF, 1.09 MB
english, 2019
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