Vertical MoS 2 double layer...

Nano Letters 2019 / 03

Vertical MoS 2 double layer memristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100 mV

Xu, Renjing, Jang, Houk, Lee, Min-Hyun, Amanov, Dovran, Cho, Yeonchoo, Kim, Haeryong, Park, Seongjun, Shin, Hyeon-Jin, Ham, Donhee
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Language:
english
Journal:
Nano Letters
DOI:
10.1021/acs.nanolett.8b05140
Date:
March, 2019
File:
PDF, 667 KB
english, 2019
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