Impact ionisation thresholds in silicon and germanium under...

Impact ionisation thresholds in silicon and germanium under hydrostatic pressure and strain

Czajkowski, I.K., Allam, J., Silver, M., Adams, A.R., Gell, M.A.
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Volume:
137
Year:
1990
Language:
english
Journal:
IEE Proceedings J Optoelectronics
DOI:
10.1049/ip-j.1990.0016
File:
PDF, 811 KB
english, 1990
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