28 nm FDSOI nMOSFET RF Figures of Merits and Parasitic...

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IEEE Journal of the Electron Devices Society 2019

28 nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements extraction at Cryogenic Temperature down to 77 K

Esfeh, B. Kazemi, Kilchytska, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P.
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Year:
2019
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2906724
File:
PDF, 925 KB
english, 2019
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