2D study of AlGaN/AlN/GaN/AlGaN HEMTs’ response to traps
Hezabra, A., Abdeslam, N. A., Sengouga, N., Yagoub, M. C. E.Volume:
40
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/40/2/022802
Date:
February, 2019
File:
PDF, 426 KB
english, 2019