[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - First-principles evaluation of resistance contributions in Ruthenium interconnects for advanced technology nodes
Dixit, Hemant, Cho, Jin, Benistant, FrancisYear:
2018
Language:
english
DOI:
10.1109/SISPAD.2018.8551743
File:
PDF, 181 KB
english, 2018