Evidence for defect-assisted tunneling and recombination at...

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Applied Physics Express 2019 / 03

Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs

De Santi, Carlo, Buffolo, Matteo, Renso, Nicola, Neviani, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
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Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/ab10e3
Date:
March, 2019
File:
PDF, 730 KB
english, 2019
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