Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation
Kanaki, Toshiki, Matsumoto, Shin, Narayananellore, Sai Krishna, Saito, Hidekazu, Iwasa, Yoshihiro, Tanaka, Masaaki, Ohya, ShinobuVolume:
12
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/aafed6
Date:
February, 2019
File:
PDF, 778 KB
2019