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Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Sawabe, Tomoaki, Ikeda, KeijiVolume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/aafd97
Date:
April, 2019
File:
PDF, 1.11 MB
english, 2019