Formation and multiplication of basal plane dislocations...

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Journal of Crystal Growth 2019 / 3

Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals

Nakano, Takahiro, Shinagawa, Naoto, Yabu, Masahiro, Ohtani, Noboru
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.03.027
Date:
March, 2019
File:
PDF, 2.04 MB
english, 2019
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