Highly Scaled Strained Silicon-On-Insulator Technology for...

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Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs

Kong, Eugene Y.-J., Yadav, Sachin, Lei, Dian, Kang, Yuye, Sivan, Maheswari, Li, Yida, Nguyen, Bich-Yen, Schwarzenbach, Walter, Ecarnot, Ludovic, Sellier, Manuel, Maleville, Christophe, Thean, Aaron V.
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Year:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2904313
File:
PDF, 3.64 MB
english, 2019
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