On the possible conduction mechanisms in Rhenium/n-GaAs...

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Journal of Materials Science: Materials in Electronics 2019 / 4

On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K

Durmuş, Haziret, Yıldırım, Mert, Altındal, Şemsettin
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Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-019-01233-z
Date:
April, 2019
File:
PDF, 1.56 MB
english, 2019
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