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Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs
Chang, Li-Cheng, Lin, Jhih-Hao, Dai, Cheng-Jia, Yang, Ming, Jiang, Yi-Hong, Wu, Yuh-Renn, Wu, Chao-HsinVolume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5085275
Date:
March, 2019
File:
PDF, 4.38 MB
english, 2019