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High-performance thin film transistors based on amorphous Al–N co-doped InZnO films prepared by RF magnetron sputtering
Ma, Yaobin, Su, Jinbao, Li, Ran, Tian, Longjie, Wang, Qi, Zhang, XiqingLanguage:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-019-01324-x
Date:
April, 2019
File:
PDF, 1.40 MB
english, 2019