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Photoemission yield and the electron escape depth determination in metal–oxide–semiconductor structures on N + -type and P + -type silicon substrates
Przewlocki, H. M., Brzezinska, D., Engstrom, O.Volume:
111
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4722275
Date:
June, 2012
File:
PDF, 760 KB
english, 2012