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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlₓTi₁₋ₓO Based Gate Stack Engineering
Dutta Gupta, Sayak, Soni, Ankit, Joshi, Vipin, Kumar, Jeevesh, Sengupta, Rudrarup, Khand, Heena, Shankar, Bhawani, Mohan, Nagaboopathy, Raghavan, Srinivasan, Bhat, Navakanta, Shrivastava, MayankYear:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2908960
File:
PDF, 31 KB
english, 2019