Role of hole trapping in the unintentionally doped...

Nanotechnology 2019 / 04

Role of hole trapping in the unintentionally doped (UID)-GaN layer in suppressing the two-dimensional electron gas (2DEG) degradation in AlGaN/GaN heterostructures on Si

Hu, Anqi, Song, Chunyan, Yang, Xuelin, He, Xiaoying, Shen, Bo, Guo, Xia
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Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/ab1948
Date:
April, 2019
File:
PDF, 988 KB
english, 2019
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