Electronic and atomic structure studies of tin oxide layers...

Materials Science in Semiconductor Processing 2019 / 08 Vol. 99

Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Manyakin, M.D., Kurganskii, S.I., Dubrovskii, O.I., Chuvenkova, O.A., Domashevskaya, E.P., Ryabtsev, S.V., Ovsyannikov, R., Parinova, E.V., Sivakov, V., Turishchev, S. Yu.
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Volume:
99
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.04.006
Date:
August, 2019
File:
PDF, 1.14 MB
english, 2019
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