Comparison between proton irradiated triple gate SOI TFETS...

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Semiconductor Science and Technology 2019 / 03

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

Agopian, Paula Ghedini Der, Torres, Henrique Lanza Faria, Martino, Joao Antonio, Rooyackers, Rita, Simoen, Eddy, Claeys, Cor, Collaert, Nadine
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab118f
Date:
March, 2019
File:
PDF, 812 KB
english, 2019
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