Resonance-enhanced tunneling current through Si-p/n junction with additional dopants; theoretical study
Cho, Sanghun, Iizuka, Shota, NAKAYAMA, TakashiLanguage:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab1717
Date:
April, 2019
File:
PDF, 1.94 MB
english, 2019