Recovery of p-GaN surface damage induced by dry etching for...

Applied Physics Express 2019 / 05 Vol. 12; Iss. 5

Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact

He, Junlei, Zhong, Yaozong, Zhou, Yu, Guo, Xiaolu, Huang, Yingnan, Liu, Jianxun, Feng, Meixin, Sun, Qian, Ikeda, Masao, Yang, Hui
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Volume:
12
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/1882-0786/ab13d7
Date:
May, 2019
File:
PDF, 1016 KB
english, 2019
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