Study of interfacial oxide layer of LaAlO3gate dielectrics...

Applied Physics A: Materials Science & Processing 2005 / 02 Vol. 80; Iss. 3

Study of interfacial oxide layer of LaAlO3gate dielectrics on Si for metal–insulator–semiconductor devices

H. Ling, X. Lu, A. Li, D. Wu, Q. Shao, J. Sheng, Z. Liu, N. Ming, X. Wang, B.-Y. Nguyen, H. Zhou
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Volume:
80
Language:
english
Pages:
4
DOI:
10.1007/s00339-003-2266-6
Date:
February, 2005
File:
PDF, 545 KB
english, 2005
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