Design of AlGaN-based lasers with a buried tunnel junction...

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Semiconductor Science and Technology 2019 / 04

Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission

Arafin, Shamsul, Hasan, Syed M N, Jamal-Eddine, Zane, Wickramaratne, Darshana, Rajan, Siddharth
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab19cd
Date:
April, 2019
File:
PDF, 1.67 MB
english, 2019
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