Physically based model for trapping and self-heating...

Applied Physics A: Materials Science & Processing 2008 / 05 Vol. 91; Iss. 2

Physically based model for trapping and self-heating effects in 4H-SiC MESFETs

Hongliang Lu, Yimen Zhang, Yuming Zhang, Yong Che, Quanjun Cao, Shaojin Zheng
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Volume:
91
Language:
english
Pages:
4
DOI:
10.1007/s00339-008-4396-3
Date:
May, 2008
File:
PDF, 394 KB
english, 2008
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