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T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation
Y. D. Du, H. Z. Cao, W. Yan, W. H. Han, Y. Liu, X. Z. Dong, Y. B. Zhang, F. Jin, Z. S. Zhao, F. H. Yang, X. M. DuanVolume:
106
Language:
english
Pages:
5
DOI:
10.1007/s00339-011-6712-6
Date:
March, 2012
File:
PDF, 447 KB
english, 2012