AlN epitaxy on SiC by low-temperature atomic layer...

RSC Advances 2019 Vol. 9; Iss. 22

AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

Kao, Wei-Chung, Lee, Wei-Hao, Yi, Sheng-Han, Shen, Tsung-Han, Lin, Hsin-Chih, Chen, Miin-Jang
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Volume:
9
Year:
2019
Language:
english
Journal:
RSC Advances
DOI:
10.1039/c9ra00008a
File:
PDF, 853 KB
english, 2019
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